Triangular ferroelectric domains of highly (111)-oriented NaNbO3 thin film on a glass substrate

Woo Hee Kim; Jong Yeog Son

doi:10.1007/s13391-013-3120-4

Triangular ferroelectric domains of highly (111)-oriented NaNbO₃ thin film on a glass substrate

Woo Hee Kim
, Jong Yeog Son

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Highly (111)-oriented polycrystalline NaNbO₃ (NNO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition. To obtain a well-crystallized Pt bottom electrode on glass substrates, Ta buffer layers were employed between Pt bottom electrodes and glass substrates. The NNO thin film exhibited good ferroelectricity with high remanent polarization (2P _r ≈ 46 μC/cm²) and leakage current density (∼2 × 10^-6 A/cm² at 500 kV/cm). Based on a piezoelectric force microscope study, it is demonstrated that the NNO thin film with triangular grains has ferroelectric domain wall energy slightly less than PbTiO₃ thin films.

Original language	English
Pages (from-to)	107-110
Number of pages	4
Journal	Electronic Materials Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1007/s13391-013-3120-4
Publication status	Published - Jan 2014

Keywords

ferroelectric domain wall energy
ferroelectric polarization
piezoelectric force microscopy
pulsed laser deposition

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10.1007/s13391-013-3120-4

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title = "Triangular ferroelectric domains of highly (111)-oriented NaNbO3 thin film on a glass substrate",

abstract = "Highly (111)-oriented polycrystalline NaNbO3 (NNO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition. To obtain a well-crystallized Pt bottom electrode on glass substrates, Ta buffer layers were employed between Pt bottom electrodes and glass substrates. The NNO thin film exhibited good ferroelectricity with high remanent polarization (2P r ≈ 46 μC/cm2) and leakage current density (∼2 {\texttimes} 10-6 A/cm2 at 500 kV/cm). Based on a piezoelectric force microscope study, it is demonstrated that the NNO thin film with triangular grains has ferroelectric domain wall energy slightly less than PbTiO3 thin films.",

keywords = "ferroelectric domain wall energy, ferroelectric polarization, piezoelectric force microscopy, pulsed laser deposition",

author = "Kim, \{Woo Hee\} and Son, \{Jong Yeog\}",

year = "2014",

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doi = "10.1007/s13391-013-3120-4",

language = "English",

volume = "10",

pages = "107--110",

journal = "Electronic Materials Letters",

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T1 - Triangular ferroelectric domains of highly (111)-oriented NaNbO3 thin film on a glass substrate

AU - Kim, Woo Hee

AU - Son, Jong Yeog

PY - 2014/1

Y1 - 2014/1

N2 - Highly (111)-oriented polycrystalline NaNbO3 (NNO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition. To obtain a well-crystallized Pt bottom electrode on glass substrates, Ta buffer layers were employed between Pt bottom electrodes and glass substrates. The NNO thin film exhibited good ferroelectricity with high remanent polarization (2P r ≈ 46 μC/cm2) and leakage current density (∼2 × 10-6 A/cm2 at 500 kV/cm). Based on a piezoelectric force microscope study, it is demonstrated that the NNO thin film with triangular grains has ferroelectric domain wall energy slightly less than PbTiO3 thin films.

AB - Highly (111)-oriented polycrystalline NaNbO3 (NNO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition. To obtain a well-crystallized Pt bottom electrode on glass substrates, Ta buffer layers were employed between Pt bottom electrodes and glass substrates. The NNO thin film exhibited good ferroelectricity with high remanent polarization (2P r ≈ 46 μC/cm2) and leakage current density (∼2 × 10-6 A/cm2 at 500 kV/cm). Based on a piezoelectric force microscope study, it is demonstrated that the NNO thin film with triangular grains has ferroelectric domain wall energy slightly less than PbTiO3 thin films.

KW - ferroelectric domain wall energy

KW - ferroelectric polarization

KW - piezoelectric force microscopy

KW - pulsed laser deposition

UR - https://www.scopus.com/pages/publications/84893385820

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DO - 10.1007/s13391-013-3120-4

M3 - Article

AN - SCOPUS:84893385820

SN - 1738-8090

VL - 10

SP - 107

EP - 110

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 1

ER -

Triangular ferroelectric domains of highly (111)-oriented NaNbO₃ thin film on a glass substrate

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