Two dimensional, bi-layered SnS2@Co3S4 heterostructure formation via SILAR method: Toward high performance supercapacitors with superior electrodes

Niraj Kumar; Dhananjay Mishra; Seung Yeob Kim; Sung Hun Jin

doi:10.1016/j.matlet.2019.127173

Two dimensional, bi-layered SnS₂@Co₃S₄ heterostructure formation via SILAR method: Toward high performance supercapacitors with superior electrodes

Niraj Kumar, Dhananjay Mishra, Seung Yeob Kim, Sung Hun Jin

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Herein, we report bi-metal heterostructured cobalt-tin sulfides (h-CTS) via combination of layered structures of tin sulfides (TS) and cobalt sulfides (CS) by using selective ion layer adsorption and reaction (SILAR) method. 2 dimensional (2D) h-CTS (SnS₂@Co₃S₄) exhibits the highest specific capacitance of 1580 Fg⁻¹ at 1 mVs⁻¹ and retain outstanding and improved cyclic stability of 94.8% after 3000 cycles. Excellent capacitive performance of bi-layered h-CTS material via simple and effective binder-free method make it suitable candidate for next generation electronic system.

Original language	English
Article number	127173
Journal	Materials Letters
Volume	262
DOIs	https://doi.org/10.1016/j.matlet.2019.127173
Publication status	Published - 1 Mar 2020

Bibliographical note

Publisher Copyright:
© 2019

Keywords

High specific capacitance
Interconnected 2D nanocluster
Outstanding cyclic stability
Self-assembled bi-metal matrix
Supercapacitor application

Access to Document

10.1016/j.matlet.2019.127173

Cite this

@article{29573410ad6346f1aa7aecefdb07bd33,

title = "Two dimensional, bi-layered SnS2@Co3S4 heterostructure formation via SILAR method: Toward high performance supercapacitors with superior electrodes",

abstract = "Herein, we report bi-metal heterostructured cobalt-tin sulfides (h-CTS) via combination of layered structures of tin sulfides (TS) and cobalt sulfides (CS) by using selective ion layer adsorption and reaction (SILAR) method. 2 dimensional (2D) h-CTS (SnS2@Co3S4) exhibits the highest specific capacitance of 1580 Fg−1 at 1 mVs−1 and retain outstanding and improved cyclic stability of 94.8% after 3000 cycles. Excellent capacitive performance of bi-layered h-CTS material via simple and effective binder-free method make it suitable candidate for next generation electronic system.",

keywords = "High specific capacitance, Interconnected 2D nanocluster, Outstanding cyclic stability, Self-assembled bi-metal matrix, Supercapacitor application",

author = "Niraj Kumar and Dhananjay Mishra and Kim, {Seung Yeob} and Jin, {Sung Hun}",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2020",

month = mar,

day = "1",

doi = "10.1016/j.matlet.2019.127173",

language = "English",

volume = "262",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Two dimensional, bi-layered SnS2@Co3S4 heterostructure formation via SILAR method

T2 - Toward high performance supercapacitors with superior electrodes

AU - Kumar, Niraj

AU - Mishra, Dhananjay

AU - Kim, Seung Yeob

AU - Jin, Sung Hun

PY - 2020/3/1

Y1 - 2020/3/1

N2 - Herein, we report bi-metal heterostructured cobalt-tin sulfides (h-CTS) via combination of layered structures of tin sulfides (TS) and cobalt sulfides (CS) by using selective ion layer adsorption and reaction (SILAR) method. 2 dimensional (2D) h-CTS (SnS2@Co3S4) exhibits the highest specific capacitance of 1580 Fg−1 at 1 mVs−1 and retain outstanding and improved cyclic stability of 94.8% after 3000 cycles. Excellent capacitive performance of bi-layered h-CTS material via simple and effective binder-free method make it suitable candidate for next generation electronic system.

AB - Herein, we report bi-metal heterostructured cobalt-tin sulfides (h-CTS) via combination of layered structures of tin sulfides (TS) and cobalt sulfides (CS) by using selective ion layer adsorption and reaction (SILAR) method. 2 dimensional (2D) h-CTS (SnS2@Co3S4) exhibits the highest specific capacitance of 1580 Fg−1 at 1 mVs−1 and retain outstanding and improved cyclic stability of 94.8% after 3000 cycles. Excellent capacitive performance of bi-layered h-CTS material via simple and effective binder-free method make it suitable candidate for next generation electronic system.

KW - High specific capacitance

KW - Interconnected 2D nanocluster

KW - Outstanding cyclic stability

KW - Self-assembled bi-metal matrix

KW - Supercapacitor application

UR - http://www.scopus.com/inward/record.url?scp=85076694827&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2019.127173

DO - 10.1016/j.matlet.2019.127173

M3 - Article

AN - SCOPUS:85076694827

SN - 0167-577X

VL - 262

JO - Materials Letters

JF - Materials Letters

M1 - 127173

ER -