Ultra-Low Power, Emission Gate Driver With Pulse Width Modulation Using Low-Temperature Poly-Si Oxide Thin-Film Transistors

Junyeong Kim, Mohammad Masum Billah, Jin Jang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We report a novel emission gate driver using low- temperature poly-Si oxide (LTPO) thin-film transistors (TFTs). The proposed circuit consists of eight p-type low-temperature poly-Si (LTPS) and four n-type amorphous InGaZnO (a-IGZO) TFTs. The output pulse width is adjustable by changing the position of starting control signal which has constant pulse width without additional clock signals. The emission gate driver releases the output signals with various duty ratios. Excellent gate driving performance is achieved from the LTPO emission gate driver, although the a-IGZO TFTs have the threshold voltage of −5.5 V. In addition, the power consumption is as low as 5.98 mW in case of 80 <inline-formula> <tex-math notation="LaTeX">boldsymbol {mu }text{s} </tex-math></inline-formula> pulse, 10 times of gate pulse, at refresh rate of 120 Hz with full high-definition (<inline-formula> <tex-math notation="LaTeX">1920times1080 </tex-math></inline-formula>) for active-matrix organic light- emitting diode (AMOLED) display.

Original languageEnglish
Pages (from-to)236-239
Number of pages4
JournalIEEE Electron Device Letters
Volume43
Issue number2
DOIs
Publication statusPublished - 1 Feb 2022

Keywords

  • Active matrix organic light emitting diodes
  • Gate drivers
  • Inverters
  • Logic gates
  • Power demand
  • Pulse width modulation
  • Thin film transistors

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