Ultrafast photoluminescence from freestanding Si nanocrystals

Sung Kim; Dong Hee Shin; Suk Ho Choi

doi:10.1063/1.4729605

Ultrafast photoluminescence from freestanding Si nanocrystals

Sung Kim, Dong Hee Shin, Suk Ho Choi

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

SiO _1.2/SiO ₂ multilayers were grown on n-type (100) Si wafers by ion beam sputtering and subsequently annealed at 1100 °C to form SiO ₂-embedded Si (S-Si) nanocrystals (NCs). The SiO ₂ matrix was then removed from S-Si NCs by chemical treatments to prepare freestanding Si (F-Si) NCs. The photoluminescence (PL) peak of F-Si NCs at ∼657 nm (1.89 eV) is blue-shifted with respect to that of S-Si NCs at ∼816 nm (1.52 eV). The peak shift of ∼0.37 eV is much larger than what is expected by the quantum confinement effect. The PL lifetime of F-Si NCs (∼3 ns) is much shorter than that of S-Si NCs (∼50 μs). Possible physical mechanisms are discussed to explain the origin of the fast PL band found in F-Si NCs.

Original language	English
Article number	253103
Journal	Applied Physics Letters
Volume	100
Issue number	25
DOIs	https://doi.org/10.1063/1.4729605
Publication status	Published - 18 Jun 2012

Bibliographical note

Funding Information:
This work was supported by a grant from the Kyung Hee University in 2011 (KHU – 20110239) and was performed using the high-voltage electron microscope (JEM-ARM1300S, Jeol, Japan) installed at Korea Basic Science Institute.

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title = "Ultrafast photoluminescence from freestanding Si nanocrystals",

abstract = "SiO 1.2/SiO 2 multilayers were grown on n-type (100) Si wafers by ion beam sputtering and subsequently annealed at 1100 °C to form SiO 2-embedded Si (S-Si) nanocrystals (NCs). The SiO 2 matrix was then removed from S-Si NCs by chemical treatments to prepare freestanding Si (F-Si) NCs. The photoluminescence (PL) peak of F-Si NCs at ∼657 nm (1.89 eV) is blue-shifted with respect to that of S-Si NCs at ∼816 nm (1.52 eV). The peak shift of ∼0.37 eV is much larger than what is expected by the quantum confinement effect. The PL lifetime of F-Si NCs (∼3 ns) is much shorter than that of S-Si NCs (∼50 μs). Possible physical mechanisms are discussed to explain the origin of the fast PL band found in F-Si NCs.",

author = "Sung Kim and Shin, {Dong Hee} and Choi, {Suk Ho}",

note = "Funding Information: This work was supported by a grant from the Kyung Hee University in 2011 (KHU – 20110239) and was performed using the high-voltage electron microscope (JEM-ARM1300S, Jeol, Japan) installed at Korea Basic Science Institute.",

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doi = "10.1063/1.4729605",

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AU - Kim, Sung

AU - Shin, Dong Hee

AU - Choi, Suk Ho

N1 - Funding Information: This work was supported by a grant from the Kyung Hee University in 2011 (KHU – 20110239) and was performed using the high-voltage electron microscope (JEM-ARM1300S, Jeol, Japan) installed at Korea Basic Science Institute.

PY - 2012/6/18

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N2 - SiO 1.2/SiO 2 multilayers were grown on n-type (100) Si wafers by ion beam sputtering and subsequently annealed at 1100 °C to form SiO 2-embedded Si (S-Si) nanocrystals (NCs). The SiO 2 matrix was then removed from S-Si NCs by chemical treatments to prepare freestanding Si (F-Si) NCs. The photoluminescence (PL) peak of F-Si NCs at ∼657 nm (1.89 eV) is blue-shifted with respect to that of S-Si NCs at ∼816 nm (1.52 eV). The peak shift of ∼0.37 eV is much larger than what is expected by the quantum confinement effect. The PL lifetime of F-Si NCs (∼3 ns) is much shorter than that of S-Si NCs (∼50 μs). Possible physical mechanisms are discussed to explain the origin of the fast PL band found in F-Si NCs.

AB - SiO 1.2/SiO 2 multilayers were grown on n-type (100) Si wafers by ion beam sputtering and subsequently annealed at 1100 °C to form SiO 2-embedded Si (S-Si) nanocrystals (NCs). The SiO 2 matrix was then removed from S-Si NCs by chemical treatments to prepare freestanding Si (F-Si) NCs. The photoluminescence (PL) peak of F-Si NCs at ∼657 nm (1.89 eV) is blue-shifted with respect to that of S-Si NCs at ∼816 nm (1.52 eV). The peak shift of ∼0.37 eV is much larger than what is expected by the quantum confinement effect. The PL lifetime of F-Si NCs (∼3 ns) is much shorter than that of S-Si NCs (∼50 μs). Possible physical mechanisms are discussed to explain the origin of the fast PL band found in F-Si NCs.

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VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Ultrafast photoluminescence from freestanding Si nanocrystals

Abstract

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