Unidirectional oxide hetero-interface thin-film diode

Youngmin Park; Eungkyu Lee; Jinwon Lee; Keon Hee Lim; Youn Sang Kim

doi:10.1063/1.4932069

Unidirectional oxide hetero-interface thin-film diode

Youngmin Park
, Eungkyu Lee
, Jinwon Lee
, Keon Hee Lim
, Youn Sang Kim

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10⁵ at 5V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10²Hz<f<10⁶Hz, providing a high feasibility for practical applications.

Original language	English
Article number	143506
Journal	Applied Physics Letters
Volume	107
Issue number	14
DOIs	https://doi.org/10.1063/1.4932069
Publication status	Published - 5 Oct 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

Access to Document

10.1063/1.4932069

Cite this

@article{aa7374e07d2442e8bd5a6bc15ad57ae9,

title = "Unidirectional oxide hetero-interface thin-film diode",

abstract = "The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼105 at 5V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 102Hz6Hz, providing a high feasibility for practical applications.",

author = "Youngmin Park and Eungkyu Lee and Jinwon Lee and Lim, \{Keon Hee\} and Kim, \{Youn Sang\}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = oct,

day = "5",

doi = "10.1063/1.4932069",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Unidirectional oxide hetero-interface thin-film diode

AU - Park, Youngmin

AU - Lee, Eungkyu

AU - Lee, Jinwon

AU - Lim, Keon Hee

AU - Kim, Youn Sang

PY - 2015/10/5

Y1 - 2015/10/5

N2 - The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼105 at 5V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 102Hz6Hz, providing a high feasibility for practical applications.

AB - The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼105 at 5V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 102Hz6Hz, providing a high feasibility for practical applications.

UR - https://www.scopus.com/pages/publications/84943807016

U2 - 10.1063/1.4932069

DO - 10.1063/1.4932069

M3 - Article

AN - SCOPUS:84943807016

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143506

ER -

Unidirectional oxide hetero-interface thin-film diode

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this