UV-curable organic-inorganic hybrid gate dielectrics for organic thin film transistors

Yuedan Wang; Hongdoo Kim

doi:10.1016/j.orgel.2012.08.014

UV-curable organic-inorganic hybrid gate dielectrics for organic thin film transistors

Yuedan Wang
, Hongdoo Kim

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

UV-curable hybrid thin films were prepared from ZrO₂ hybrid sols containing the acrylic monomer, DPHA, on substrates. The prepared ZrO ₂ hybrid sols showed long-term storage stability. Hybrid dielectrics were prepared by sol-gel process and UV cross-linking below 160 °C. Leakage currents of dielectric layers remained below 10^-6 A in 2 MV/cm and dielectric constants were measured to be 3.85-4 at 1 kHz. In addition, organic-inorganic hybrid thin films have smooth and hydrophobic surface. Pentacene OTFTs with thin hybrid dielectrics exhibit of mobility as large as 2.5 cm²/V s, subthreshold swing as low as 0.2 V/decade, an on-off ratio of 10⁵. These results demonstrated that UV-curable sol-gel hybrid systems are suitable for gate dielectrics in OTFTs.

Original language	English
Pages (from-to)	2997-3003
Number of pages	7
Journal	Organic Electronics
Volume	13
Issue number	12
DOIs	https://doi.org/10.1016/j.orgel.2012.08.014
Publication status	Published - Dec 2012

Bibliographical note

Funding Information:
This study was supported by the Ministry of Knowledge Economy, Korea (Strategic Technology Project # 10031791).

Keywords

OTFTs
Organic-inorganic hybrid materials
Sol-gel process
UV-curing

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10.1016/j.orgel.2012.08.014

Cite this

@article{5baab18f56a843da8ea56c4274542ec7,

title = "UV-curable organic-inorganic hybrid gate dielectrics for organic thin film transistors",

abstract = "UV-curable hybrid thin films were prepared from ZrO2 hybrid sols containing the acrylic monomer, DPHA, on substrates. The prepared ZrO 2 hybrid sols showed long-term storage stability. Hybrid dielectrics were prepared by sol-gel process and UV cross-linking below 160 °C. Leakage currents of dielectric layers remained below 10-6 A in 2 MV/cm and dielectric constants were measured to be 3.85-4 at 1 kHz. In addition, organic-inorganic hybrid thin films have smooth and hydrophobic surface. Pentacene OTFTs with thin hybrid dielectrics exhibit of mobility as large as 2.5 cm2/V s, subthreshold swing as low as 0.2 V/decade, an on-off ratio of 105. These results demonstrated that UV-curable sol-gel hybrid systems are suitable for gate dielectrics in OTFTs.",

keywords = "OTFTs, Organic-inorganic hybrid materials, Sol-gel process, UV-curing",

author = "Yuedan Wang and Hongdoo Kim",

note = "Funding Information: This study was supported by the Ministry of Knowledge Economy, Korea (Strategic Technology Project \# 10031791). ",

year = "2012",

month = dec,

doi = "10.1016/j.orgel.2012.08.014",

language = "English",

volume = "13",

pages = "2997--3003",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

number = "12",

}

TY - JOUR

T1 - UV-curable organic-inorganic hybrid gate dielectrics for organic thin film transistors

AU - Wang, Yuedan

AU - Kim, Hongdoo

N1 - Funding Information: This study was supported by the Ministry of Knowledge Economy, Korea (Strategic Technology Project # 10031791).

PY - 2012/12

Y1 - 2012/12

N2 - UV-curable hybrid thin films were prepared from ZrO2 hybrid sols containing the acrylic monomer, DPHA, on substrates. The prepared ZrO 2 hybrid sols showed long-term storage stability. Hybrid dielectrics were prepared by sol-gel process and UV cross-linking below 160 °C. Leakage currents of dielectric layers remained below 10-6 A in 2 MV/cm and dielectric constants were measured to be 3.85-4 at 1 kHz. In addition, organic-inorganic hybrid thin films have smooth and hydrophobic surface. Pentacene OTFTs with thin hybrid dielectrics exhibit of mobility as large as 2.5 cm2/V s, subthreshold swing as low as 0.2 V/decade, an on-off ratio of 105. These results demonstrated that UV-curable sol-gel hybrid systems are suitable for gate dielectrics in OTFTs.

AB - UV-curable hybrid thin films were prepared from ZrO2 hybrid sols containing the acrylic monomer, DPHA, on substrates. The prepared ZrO 2 hybrid sols showed long-term storage stability. Hybrid dielectrics were prepared by sol-gel process and UV cross-linking below 160 °C. Leakage currents of dielectric layers remained below 10-6 A in 2 MV/cm and dielectric constants were measured to be 3.85-4 at 1 kHz. In addition, organic-inorganic hybrid thin films have smooth and hydrophobic surface. Pentacene OTFTs with thin hybrid dielectrics exhibit of mobility as large as 2.5 cm2/V s, subthreshold swing as low as 0.2 V/decade, an on-off ratio of 105. These results demonstrated that UV-curable sol-gel hybrid systems are suitable for gate dielectrics in OTFTs.

KW - OTFTs

KW - Organic-inorganic hybrid materials

KW - Sol-gel process

KW - UV-curing

UR - https://www.scopus.com/pages/publications/84867236835

U2 - 10.1016/j.orgel.2012.08.014

DO - 10.1016/j.orgel.2012.08.014

M3 - Article

AN - SCOPUS:84867236835

SN - 1566-1199

VL - 13

SP - 2997

EP - 3003

JO - Organic Electronics

JF - Organic Electronics

IS - 12

ER -

UV-curable organic-inorganic hybrid gate dielectrics for organic thin film transistors

Abstract

Bibliographical note

Keywords

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