Wake-Up and Endurance Characteristics in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitor Depending on the Crystal Orientation of the TiN Bottom Electrodes

Dong Hee Han; Ae Jin Lee; Min Kyeong Nam; Seungwoo Lee; Su Jin Choi; Youngjin Kim; Taehwan Moon; Woojin Jeon

doi:10.1109/TED.2023.3243579

Wake-Up and Endurance Characteristics in Hf_0.5Zr_0.5O₂-Based Metal-Ferroelectric-Metal Capacitor Depending on the Crystal Orientation of the TiN Bottom Electrodes

Dong Hee Han
, Ae Jin Lee
, Min Kyeong Nam
, Seungwoo Lee
, Su Jin Choi
, Youngjin Kim
, Taehwan Moon
, Woojin Jeon

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The ferroelectric properties of Hf0.5Zr0.5O2(HZO) according to the preferred orientations of the titanium nitride (TiN) bottom electrode (BE) were investigated. The (111) and (200)-oriented TiN were used as BEs. The difference in crystallinity of HZO was observed and the following electrical properties were compared. By employing the various crystal structure analyses and electrical measurements, it was found that the HZO thin film grown on TiN(200) forms more ferroelectric non-centrosymmetric orthorhombic phase in the pristine state due to the local epitaxial relation between TiN(200) and HZO.

Original language	English
Pages (from-to)	1983-1988
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	4
DOIs	https://doi.org/10.1109/TED.2023.3243579
Publication status	Published - 1 Apr 2023

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Crystallographic orientation
Hf0.5Zr0.5O2 (HZO)
endurance
ferroelectricity
metal-ferroelectric-metal (MFM) capacitor
wake-up

Access to Document

10.1109/TED.2023.3243579

Cite this

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title = "Wake-Up and Endurance Characteristics in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitor Depending on the Crystal Orientation of the TiN Bottom Electrodes",

abstract = "The ferroelectric properties of Hf0.5Zr0.5O2(HZO) according to the preferred orientations of the titanium nitride (TiN) bottom electrode (BE) were investigated. The (111) and (200)-oriented TiN were used as BEs. The difference in crystallinity of HZO was observed and the following electrical properties were compared. By employing the various crystal structure analyses and electrical measurements, it was found that the HZO thin film grown on TiN(200) forms more ferroelectric non-centrosymmetric orthorhombic phase in the pristine state due to the local epitaxial relation between TiN(200) and HZO.",

keywords = "Crystallographic orientation, Hf0.5Zr0.5O2 (HZO), endurance, ferroelectricity, metal-ferroelectric-metal (MFM) capacitor, wake-up",

author = "Han, \{Dong Hee\} and Lee, \{Ae Jin\} and Nam, \{Min Kyeong\} and Seungwoo Lee and Choi, \{Su Jin\} and Youngjin Kim and Taehwan Moon and Woojin Jeon",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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T1 - Wake-Up and Endurance Characteristics in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitor Depending on the Crystal Orientation of the TiN Bottom Electrodes

AU - Han, Dong Hee

AU - Lee, Ae Jin

AU - Nam, Min Kyeong

AU - Lee, Seungwoo

AU - Choi, Su Jin

AU - Kim, Youngjin

AU - Moon, Taehwan

AU - Jeon, Woojin

PY - 2023/4/1

Y1 - 2023/4/1

N2 - The ferroelectric properties of Hf0.5Zr0.5O2(HZO) according to the preferred orientations of the titanium nitride (TiN) bottom electrode (BE) were investigated. The (111) and (200)-oriented TiN were used as BEs. The difference in crystallinity of HZO was observed and the following electrical properties were compared. By employing the various crystal structure analyses and electrical measurements, it was found that the HZO thin film grown on TiN(200) forms more ferroelectric non-centrosymmetric orthorhombic phase in the pristine state due to the local epitaxial relation between TiN(200) and HZO.

AB - The ferroelectric properties of Hf0.5Zr0.5O2(HZO) according to the preferred orientations of the titanium nitride (TiN) bottom electrode (BE) were investigated. The (111) and (200)-oriented TiN were used as BEs. The difference in crystallinity of HZO was observed and the following electrical properties were compared. By employing the various crystal structure analyses and electrical measurements, it was found that the HZO thin film grown on TiN(200) forms more ferroelectric non-centrosymmetric orthorhombic phase in the pristine state due to the local epitaxial relation between TiN(200) and HZO.

KW - Crystallographic orientation

KW - Hf0.5Zr0.5O2 (HZO)

KW - endurance

KW - ferroelectricity

KW - metal-ferroelectric-metal (MFM) capacitor

KW - wake-up

UR - https://www.scopus.com/pages/publications/85149362203

U2 - 10.1109/TED.2023.3243579

DO - 10.1109/TED.2023.3243579

M3 - Article

AN - SCOPUS:85149362203

SN - 0018-9383

VL - 70

SP - 1983

EP - 1988

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -