Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

Shinhyuk Yang; Chi Sun Hwang; Jeong Ik Lee; Sung Min Yoon; Min Ki Ryu; Kyoung Ik Cho; Sang Hee Ko Park; Se Hyun Kim; Chan Eon Park; Jin Jang

doi:10.1063/1.3551536

Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

Shinhyuk Yang
, Chi Sun Hwang
, Jeong Ik Lee
, Sung Min Yoon
, Min Ki Ryu
, Kyoung Ik Cho
, Sang Hee Ko Park
, Se Hyun Kim
, Chan Eon Park
, Jin Jang

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

We have fabricated fully patterned transparent oxide/organic hybrid transistors on glass substrates that contain In-Ga-Zn-O as the active layer and a poly(4-vinyl phenol-comethyl methacrylate) copolymer as the dielectric layer. These devices exhibit a saturation mobility of 6.04cm² /V s, a threshold voltage value of 3.53 V, a subthreshold slope of 360 mV/decade, and an on-off ratio of 1.0× 10⁹ at a maximum processing temperature of 200 °C. We found that the bias stability characteristics of the hybrid transistors are dependent on the ambient conditions, but can also be dramatically improved by applying a hydrophobic organic passivation layer to the gate insulator.

Original language	English
Article number	103515
Journal	Applied Physics Letters
Volume	98
Issue number	10
DOIs	https://doi.org/10.1063/1.3551536
Publication status	Published - 7 Mar 2011

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program (Project No. 10035225, Development of Core Technology for High Performance AMOLED on Plastic) funded by MKE/KEIT.

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10.1063/1.3551536

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title = "Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors",

abstract = "We have fabricated fully patterned transparent oxide/organic hybrid transistors on glass substrates that contain In-Ga-Zn-O as the active layer and a poly(4-vinyl phenol-comethyl methacrylate) copolymer as the dielectric layer. These devices exhibit a saturation mobility of 6.04cm2 /V s, a threshold voltage value of 3.53 V, a subthreshold slope of 360 mV/decade, and an on-off ratio of 1.0× 109 at a maximum processing temperature of 200 °C. We found that the bias stability characteristics of the hybrid transistors are dependent on the ambient conditions, but can also be dramatically improved by applying a hydrophobic organic passivation layer to the gate insulator.",

author = "Shinhyuk Yang and Hwang, \{Chi Sun\} and Lee, \{Jeong Ik\} and Yoon, \{Sung Min\} and Ryu, \{Min Ki\} and Cho, \{Kyoung Ik\} and Park, \{Sang Hee Ko\} and Kim, \{Se Hyun\} and Park, \{Chan Eon\} and Jin Jang",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program (Project No. 10035225, Development of Core Technology for High Performance AMOLED on Plastic) funded by MKE/KEIT.",

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doi = "10.1063/1.3551536",

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T1 - Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

AU - Yang, Shinhyuk

AU - Hwang, Chi Sun

AU - Lee, Jeong Ik

AU - Yoon, Sung Min

AU - Ryu, Min Ki

AU - Cho, Kyoung Ik

AU - Park, Sang Hee Ko

AU - Kim, Se Hyun

AU - Park, Chan Eon

AU - Jang, Jin

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program (Project No. 10035225, Development of Core Technology for High Performance AMOLED on Plastic) funded by MKE/KEIT.

PY - 2011/3/7

Y1 - 2011/3/7

N2 - We have fabricated fully patterned transparent oxide/organic hybrid transistors on glass substrates that contain In-Ga-Zn-O as the active layer and a poly(4-vinyl phenol-comethyl methacrylate) copolymer as the dielectric layer. These devices exhibit a saturation mobility of 6.04cm2 /V s, a threshold voltage value of 3.53 V, a subthreshold slope of 360 mV/decade, and an on-off ratio of 1.0× 109 at a maximum processing temperature of 200 °C. We found that the bias stability characteristics of the hybrid transistors are dependent on the ambient conditions, but can also be dramatically improved by applying a hydrophobic organic passivation layer to the gate insulator.

AB - We have fabricated fully patterned transparent oxide/organic hybrid transistors on glass substrates that contain In-Ga-Zn-O as the active layer and a poly(4-vinyl phenol-comethyl methacrylate) copolymer as the dielectric layer. These devices exhibit a saturation mobility of 6.04cm2 /V s, a threshold voltage value of 3.53 V, a subthreshold slope of 360 mV/decade, and an on-off ratio of 1.0× 109 at a maximum processing temperature of 200 °C. We found that the bias stability characteristics of the hybrid transistors are dependent on the ambient conditions, but can also be dramatically improved by applying a hydrophobic organic passivation layer to the gate insulator.

UR - https://www.scopus.com/pages/publications/79952647910

U2 - 10.1063/1.3551536

DO - 10.1063/1.3551536

M3 - Article

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SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103515

ER -

Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

Abstract

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