Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation

Jihoon Jeon, Dukhyun Choi, Hyungdae Kim, Yong Tae Park, Min Jun Choi, Kwun Bum Chung

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

This work presents a method for controlling the wettability of an aluminum-hydroxide (Al(OH)3) nanostructure by using ion implantation. We implant Xe ions into Al(OH)3 nanostructures at dosages between 5 × 1014 to 1 × 1016 ions/cm2. The microscopic surface morphology of the nanostructure after implantation does not change under our dosing conditions. However, a drastic increase in the surface contact angle (CA) from 0° to 100° is observed at a dosage of 5 × 1015 ions/cm2. We attribute this significant change in CA to the composition and chemical bonding states of carbon contained within the Al(OH)3 nanostructure.

Original languageEnglish
Pages (from-to)1024-1028
Number of pages5
JournalJournal of the Korean Physical Society
Volume68
Issue number8
DOIs
Publication statusPublished - 1 Apr 2016

Keywords

  • Aluminum hydroxide
  • Contact angle
  • Ion implantation
  • X-ray photoelectron spectroscopy
  • Xe ions

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