Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation

Jihoon Jeon; Dukhyun Choi; Hyungdae Kim; Yong Tae Park; Min Jun Choi; Kwun Bum Chung

doi:10.3938/jkps.68.1024

Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation

Jihoon Jeon, Dukhyun Choi, Hyungdae Kim, Yong Tae Park, Min Jun Choi, Kwun Bum Chung

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

This work presents a method for controlling the wettability of an aluminum-hydroxide (Al(OH)₃) nanostructure by using ion implantation. We implant Xe ions into Al(OH)₃ nanostructures at dosages between 5 × 10¹⁴ to 1 × 10¹⁶ ions/cm². The microscopic surface morphology of the nanostructure after implantation does not change under our dosing conditions. However, a drastic increase in the surface contact angle (CA) from 0° to 100° is observed at a dosage of 5 × 10¹⁵ ions/cm². We attribute this significant change in CA to the composition and chemical bonding states of carbon contained within the Al(OH)₃ nanostructure.

Original language	English
Pages (from-to)	1024-1028
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	68
Issue number	8
DOIs	https://doi.org/10.3938/jkps.68.1024
Publication status	Published - 1 Apr 2016

Bibliographical note

Publisher Copyright:
© 2016, The Korean Physical Society.

Keywords

Aluminum hydroxide
Contact angle
Ion implantation
X-ray photoelectron spectroscopy
Xe ions

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10.3938/jkps.68.1024

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title = "Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation",

abstract = "This work presents a method for controlling the wettability of an aluminum-hydroxide (Al(OH)3) nanostructure by using ion implantation. We implant Xe ions into Al(OH)3 nanostructures at dosages between 5 × 1014 to 1 × 1016 ions/cm2. The microscopic surface morphology of the nanostructure after implantation does not change under our dosing conditions. However, a drastic increase in the surface contact angle (CA) from 0° to 100° is observed at a dosage of 5 × 1015 ions/cm2. We attribute this significant change in CA to the composition and chemical bonding states of carbon contained within the Al(OH)3 nanostructure.",

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T1 - Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation

AU - Jeon, Jihoon

AU - Choi, Dukhyun

AU - Kim, Hyungdae

AU - Park, Yong Tae

AU - Choi, Min Jun

AU - Chung, Kwun Bum

PY - 2016/4/1

Y1 - 2016/4/1

N2 - This work presents a method for controlling the wettability of an aluminum-hydroxide (Al(OH)3) nanostructure by using ion implantation. We implant Xe ions into Al(OH)3 nanostructures at dosages between 5 × 1014 to 1 × 1016 ions/cm2. The microscopic surface morphology of the nanostructure after implantation does not change under our dosing conditions. However, a drastic increase in the surface contact angle (CA) from 0° to 100° is observed at a dosage of 5 × 1015 ions/cm2. We attribute this significant change in CA to the composition and chemical bonding states of carbon contained within the Al(OH)3 nanostructure.

AB - This work presents a method for controlling the wettability of an aluminum-hydroxide (Al(OH)3) nanostructure by using ion implantation. We implant Xe ions into Al(OH)3 nanostructures at dosages between 5 × 1014 to 1 × 1016 ions/cm2. The microscopic surface morphology of the nanostructure after implantation does not change under our dosing conditions. However, a drastic increase in the surface contact angle (CA) from 0° to 100° is observed at a dosage of 5 × 1015 ions/cm2. We attribute this significant change in CA to the composition and chemical bonding states of carbon contained within the Al(OH)3 nanostructure.

KW - Aluminum hydroxide

KW - Contact angle

KW - Ion implantation

KW - X-ray photoelectron spectroscopy

KW - Xe ions

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DO - 10.3938/jkps.68.1024

M3 - Article

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VL - 68

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EP - 1028

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 8

ER -

Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation

Abstract

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Keywords

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