Wetting-layer transformation for Pb nanocrystals grown on Si(111)

R. Feng, E. H. Conrad, M. C. Tringides, C. Kim, P. F. Miceli

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28 Citations (Scopus)

Abstract

We present the results of in situ x-ray scattering experiments that investigate the growth of Pb nanocrystalline islands on Si(111). It is conclusively shown that the Pb nanocrystals do not reside on top of a Pb wetting layer. The nucleating Pb nanocrystals transform the highly disordered Pb wetting layer beneath the islands into well-ordered fee Pb. The surface then consists of fee Pb islands directly on top of the Si surface with the disordered wetting layer occupying the region between the islands. As the Pb nanocrystals coalesce at higher coverage we observe increasing disorder that is consistent with misfit strain relaxation. These results have important implications for predicting stable Pb island heights.

Original languageEnglish
Pages (from-to)3866-3868
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number17
DOIs
Publication statusPublished - 25 Oct 2004

Bibliographical note

Funding Information:
The Advanced Photon Source is supported by DOE W-31-109-Eng-38 and the μ CAT beam line is supported through the Ames Laboratory, which is operated for the US Department of Energy by Iowa State University under Contract No.W-7405-Eng-82. Research funding was supported, in part, by the Ames Laboratory (M.C.T.), Canim Scientific Group (E.H.C.), the Missouri University Research Board and the National Science Foundation DMR-0405742 (P.F.M., C. K.).

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