X-ray image resolution of carbon nanotube emitters grown with resist-assisted patterning process

Yi Sang Lee; Je Hwang Ryu; Han Eol Lim; Jun Won Lim; Byung Taek Son; Jong Uk Kim; Jin Jang; Kyu Chang Park

doi:10.1016/j.vacuum.2009.06.026

X-ray image resolution of carbon nanotube emitters grown with resist-assisted patterning process

Yi Sang Lee, Je Hwang Ryu, Han Eol Lim, Jun Won Lim, Byung Taek Son, Jong Uk Kim, Jin Jang, Kyu Chang Park

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We obtained X-ray images using carbon nanotube arrays. The electron emitter was fabricated using the resist-assisted patterning (RAP) process. The X-ray image was obtained with a current of 300 μA at an anode bias of 30 kVp. The emitter had a pattern width of 5 μm and a pitch of 40 μm producing a turn-on field of 1.5 V/μm with a field emission current of 10 μA/cm². The resulting X-ray image clearly shows micrometer scale lines on an integrated circuit chip bonded in a printed circuit board.

Original language	English
Pages (from-to)	523-525
Number of pages	3
Journal	Vacuum
Volume	84
Issue number	5
DOIs	https://doi.org/10.1016/j.vacuum.2009.06.026
Publication status	Published - 10 Dec 2009

Keywords

Carbon nanotube emitters
Electron emission
Resist-assisted patterning (RAP)
X-ray image

Access to Document

10.1016/j.vacuum.2009.06.026

Cite this

@article{cee598401e9749db9c02391669e93c24,

title = "X-ray image resolution of carbon nanotube emitters grown with resist-assisted patterning process",

abstract = "We obtained X-ray images using carbon nanotube arrays. The electron emitter was fabricated using the resist-assisted patterning (RAP) process. The X-ray image was obtained with a current of 300 μA at an anode bias of 30 kVp. The emitter had a pattern width of 5 μm and a pitch of 40 μm producing a turn-on field of 1.5 V/μm with a field emission current of 10 μA/cm2. The resulting X-ray image clearly shows micrometer scale lines on an integrated circuit chip bonded in a printed circuit board.",

keywords = "Carbon nanotube emitters, Electron emission, Resist-assisted patterning (RAP), X-ray image",

author = "Lee, {Yi Sang} and Ryu, {Je Hwang} and Lim, {Han Eol} and Lim, {Jun Won} and Son, {Byung Taek} and Kim, {Jong Uk} and Jin Jang and Park, {Kyu Chang}",

year = "2009",

month = dec,

day = "10",

doi = "10.1016/j.vacuum.2009.06.026",

language = "English",

volume = "84",

pages = "523--525",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd.",

number = "5",

}

TY - JOUR

T1 - X-ray image resolution of carbon nanotube emitters grown with resist-assisted patterning process

AU - Lee, Yi Sang

AU - Ryu, Je Hwang

AU - Lim, Han Eol

AU - Lim, Jun Won

AU - Son, Byung Taek

AU - Kim, Jong Uk

AU - Jang, Jin

AU - Park, Kyu Chang

PY - 2009/12/10

Y1 - 2009/12/10

N2 - We obtained X-ray images using carbon nanotube arrays. The electron emitter was fabricated using the resist-assisted patterning (RAP) process. The X-ray image was obtained with a current of 300 μA at an anode bias of 30 kVp. The emitter had a pattern width of 5 μm and a pitch of 40 μm producing a turn-on field of 1.5 V/μm with a field emission current of 10 μA/cm2. The resulting X-ray image clearly shows micrometer scale lines on an integrated circuit chip bonded in a printed circuit board.

AB - We obtained X-ray images using carbon nanotube arrays. The electron emitter was fabricated using the resist-assisted patterning (RAP) process. The X-ray image was obtained with a current of 300 μA at an anode bias of 30 kVp. The emitter had a pattern width of 5 μm and a pitch of 40 μm producing a turn-on field of 1.5 V/μm with a field emission current of 10 μA/cm2. The resulting X-ray image clearly shows micrometer scale lines on an integrated circuit chip bonded in a printed circuit board.

KW - Carbon nanotube emitters

KW - Electron emission

KW - Resist-assisted patterning (RAP)

KW - X-ray image

UR - http://www.scopus.com/inward/record.url?scp=70649089448&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2009.06.026

DO - 10.1016/j.vacuum.2009.06.026

M3 - Article

AN - SCOPUS:70649089448

SN - 0042-207X

VL - 84

SP - 523

EP - 525

JO - Vacuum

JF - Vacuum

IS - 5

ER -

X-ray image resolution of carbon nanotube emitters grown with resist-assisted patterning process

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this