Abstract
We obtained X-ray images using carbon nanotube arrays. The electron emitter was fabricated using the resist-assisted patterning (RAP) process. The X-ray image was obtained with a current of 300 μA at an anode bias of 30 kVp. The emitter had a pattern width of 5 μm and a pitch of 40 μm producing a turn-on field of 1.5 V/μm with a field emission current of 10 μA/cm2. The resulting X-ray image clearly shows micrometer scale lines on an integrated circuit chip bonded in a printed circuit board.
| Original language | English |
|---|---|
| Pages (from-to) | 523-525 |
| Number of pages | 3 |
| Journal | Vacuum |
| Volume | 84 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 10 Dec 2009 |
Keywords
- Carbon nanotube emitters
- Electron emission
- Resist-assisted patterning (RAP)
- X-ray image
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